* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capabilit.

including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * R.

The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high spe.

4N65

4N65-C

4N65-E

4N65-ML

4N65-N

4N65-Q

4N65-R

4N65-S

4N65-TC1

4N65-U

4N650

4N65B

4N65D

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